发明名称 |
Split gate EFET. |
摘要 |
Lateral FET structure is disclosed for bidirectional power switching. A split gate structure is provided to prevent unwanted formation of potential conduction channels in the OFF state of the FET. This enables the gate to be referenced in common to one of the source regions in the OFF state while still affording high blocking voltage capability. A multicell matrix array is also disclosed. |
申请公布号 |
EP0099175(A2) |
申请公布日期 |
1984.01.25 |
申请号 |
EP19830303210 |
申请日期 |
1983.06.03 |
申请人 |
EATON CORPORATION |
发明人 |
LADE, ROBERT WALKER;SCHUTTEN, HERMAN PETER;BENJAMIN, JAMES ANTHONY |
分类号 |
H01L29/06;H01L29/417;H01L29/78 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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