发明名称 LIQUID PHASE EPITAXIAL GROWTH DEVICE
摘要 PURPOSE:To form easily an epitaxial layer on a substrate with a simple device, by sealing separately the substrate and a material for forming the epitaxial layer in a sealing tube, heating the material to melt, rotating the sealing tube to bring the material melt into contact with the surface of the substrate. CONSTITUTION:A pair of carbon support parts 12A, 12B to be inscribed and fitted in a quartz sealing tube 11 and a holding base 13 having a diameter smaller than the diameter of the parts 12A, 12B are connected to constitute a titled device. A flat part is formed in the upper part of the base 13, and a CdTe substrate 14 is fixed by means of fixtures 15. On the other hand, a material Hg1-xCdxTe 16 for forming an epitaxial layer is stored in the spacing between the lower part of the base 13 and the tube 11. An H-shaped carbon member 17 is inserted into the tube 11, and the air in the tube is evacuated, then the end part D thereof is sealed. The sealing tube is put into a reaction tube and is heated with a heating furnace to melt the material 16. If the reaction tube is rotated, the substrate 14 contacts the melt 21 of the material 16, and the epitaxial layer of a prescribed thickness is formed on the surface thereof.
申请公布号 JPS5913697(A) 申请公布日期 1984.01.24
申请号 JP19820121529 申请日期 1982.07.12
申请人 FUJITSU KK 发明人 MARUYAMA KENJI;UEDA TOMOSHI;ITOU MICHIHARU;GOTOU JIYUNJIROU;YOSHIKAWA MITSUO
分类号 C30B19/06;C30B29/46;H01L21/208 主分类号 C30B19/06
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