发明名称 |
Semiconductor photo-electric converter with insulated gate over p-n charge storage region |
摘要 |
A high sensitivity semiconductor photo-electric converter is provided by electrically isolating the gate region of a static induction transistor which exhibits non-saturating current versus voltage characteristic. Optically ionized minority carriers are stored in the gate region to control the potential thereof. A semiconductor gate region provided with a insulated gate is very effective to enhance the dynamic range of the converter. Non-saturating characteristic enables enlargement of the output current simply by increasing the drain voltage. A high-speed and high sensitivity image pick-up device can be materialized by integrating a multiplicity of the static induction type photo-electric converter elements. A switching transistor may be merged in the gate region of each photo-electric converter element to enhance the operation speed of the image pick-up device.
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申请公布号 |
US4427990(A) |
申请公布日期 |
1984.01.24 |
申请号 |
US19790039445 |
申请日期 |
1979.05.15 |
申请人 |
ZAIDAN HOJIN HANDOTAI KENKYU SHINKOKAI |
发明人 |
NISHIZAWA, JUN-ICHI |
分类号 |
H01L27/146;H01L31/112;(IPC1-7):H01L29/80 |
主分类号 |
H01L27/146 |
代理机构 |
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