| 摘要 |
PURPOSE:To form easily a semiconductor layer having a uniform film thickness on plural substrates in the stage of supplying gaseous raw materials through a main introducing port and an auxiliary introducing port and forming the semiconductor layer on the substrates, by adjusting the position of the auxiliary introducing port and the concn. of the auxiliary gas. CONSTITUTION:Si single crystal substrate wafers 3 are placed on the heating jig 2 in a guartz reaction vessel 1 and electric current is run to a high-frequency work coil 7 to heat the wafers. While the jig 2 is rotated at a prescribed speed, a gaseous raw material is introduced from a supply line 4a through a main gas nozzle 5 into the vessel, and an auxiliary gaseous raw material is introduced from a supply line 4b through an auxiliary gas nozzle 6 into the vessel so that a semiconductor layer is formed on the wafers 3. The film thickness distribution only by the nozzle 5 is determined in this stage and the optimum distribution function of the replenishing gaseous raw material to make the distribution uniform is calculated. The position of the nozzle 6 and the concn. of the auxiliary gaseous raw material are set, the actual film thickness distribution function and the optimum distribution function are compared and the position and concn. are corrected in order to realize the above-mentioned optimum distribution function. |
