| 摘要 |
PURPOSE:To contrive to form the titled device to have high output by a method wherein absorption of light in the neighborhood of crystal edge faces is reduced. CONSTITUTION:A P type diffusion laye 21 is formed by diffusion leaving the undiffused parts 22 in the neighborhood of the longitudinal directionally both the side part edge faces (namely the crytal edge faces to construct the reflecting mirror faces) of an active layer 5. Because light absorption at the undiffused parts 22 is reduced, the boundary of destruction of the crystal edge faces is risen. |
