发明名称 THIN FILM DEPOSITION DEVICE
摘要 PURPOSE:To improve the efficiency of gaseous raw materials and to deposit thin films having no defects such as pinholes by pairing the adjacent substrates of substrates and impressing an AC voltage to the plural substrate pairs. CONSTITUTION:The inside of a vacuum reaction vessel 1 is evacuated ad the gaseous raw material contg. silicon is introduced into the vessel through a gaseous raw material introducing port 6. After the evacuation speed is adjusted, the AC voltage is impressed to the pair of the substrates 2, 3 and the pair of 8, 9 to generate a glow discharge. The exfoliated flake, etc. arising from the electrodes are thereby eliminated and the amorphous silicon films having no defects such as pinholes and recesses are formed. Since AC is impressed to the electrodes, the paired substrates 2, 3 and 8, 9 are made electrically equiv. to each other and the films having the uniform quality are formed. This device is effective particularly for the prepn. of the drum of an electrophotographic sensitive body.
申请公布号 JPS62174383(A) 申请公布日期 1987.07.31
申请号 JP19860016360 申请日期 1986.01.28
申请人 MITSUBISHI CHEM IND LTD 发明人 YOSHITOMI TOSHIHIKO;HORIUCHI HIROSHI;MORITA SHINICHI
分类号 H01L31/0248;C23C16/24;C23C16/30;C23C16/50;G03G5/08;G03G5/082;H01L21/205 主分类号 H01L31/0248
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