| 摘要 |
PURPOSE:To enable a DC voltage to be creased between a P well and an N substrate even if AC power is directly applied without a rectification circuit, by utilizing an N substrate, a P diffusion layer, a P well and an N diffusion layer formed in the course of manufacture of a CMOS IC for constructing full-wave rectification circuit for the P-N junction diode. CONSTITUTION:P-N junction diodes are formed between a P well contact 7 and an N diffusion layer 8 and between a P diffusion layer 9 and an N substrate contact 10. The P-N junction diodes are connected in series and an AC voltage is applied between a connection point 2 therebetween and another connection point 4 between another pair of diodes, so that a full-wave rectification circuit is thereby provided by two pairs of diodes. Thus, a positive full-wave rectification wveform is obtained in the N substrate 3 common to the tow pairs of diodes and a negative full-wave rectification waveform is obtained in the common P well 1. These waveforms can be smoothed by a capacitor 11 to provide a DC voltage, by which other CMOS circuit sections can be driven. |
