| 摘要 |
In a semiconductor device including a connection structure comprising a first conductive layer 14 formed in or on a semiconductor substrate 11, a second conductive layer 15 arranged adjacent the first conductive layer 14, and a third conductive layer 17 connecting the first conductive layer 14, and to the second conductive layer 15. The third conductive layer 17 is in contact with the first 14 and second 15 conductive layers in a contact region 16 min . One dimension of the portion of the second conductive layer 15 in the contact region 16 min varies which enables the size of the contact region 16 min to be reduced whilst still ensuring a positive connection between the first 14 and second 15, conductive layers even in the event of their misregistry. |
