发明名称 DRIVING CIRCUIT OF GATE TURN OFF THYRISTOR
摘要 PURPOSE:To control the on and off of a gate turn off (GTO) thyristor up to a high current capacity range only by connecting a transistor(TR) to control gate current. CONSTITUTION:When a signal with voltage V2 is inputted to a gate pulse signal input terminal T1, an npn TR Q2 is turned on and gate on current I1 is made flow through a control power supply T2 and a resistor R1, so that the GTO thyristor S1 is turned on and load current I2 is made flow. At that time, a pnp TR Q1 is off. When a signal with voltage V1 is inputted to the terminal T1, the TR Q2 is turned off, the gate is turned on and the flow of current I1 stops. The TR Q1 is turned on at that time, so that gate off current I3 is made flow out and the GTO thyristor S1 is turned off.
申请公布号 JPS5913422(A) 申请公布日期 1984.01.24
申请号 JP19820123550 申请日期 1982.07.14
申请人 MATSUSHITA DENKI SANGYO KK 发明人 KOBAYASHI TAKASHI;HIROI YOSHIYASU
分类号 H02M1/06;H03K17/72;H03K17/732 主分类号 H02M1/06
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