| 摘要 |
PURPOSE:To obtain excellent reliability by applying an opposite-directional pulse to a semiconductor device and detecting variation in voltage developed between terminals of the semiconductor device at the time of the application. CONSTITUTION:For example, a double-heat single diode is used as a sample 1 and consists of a glass part 11, a semiconductor element 13, metallic conductors 14 for sandwiching the element 13, etc. A circuit in figure (a) is used to set the pulse width of the opposite-directional pulse to the time when heat generated by the element 13 is conducted to the metallic conductors 13, and the opposite-directional pulse 2 is applied. At this time, the heat generation of the element 13 ends before the heat is conducted to the glass part 11, the start of the heat expansion of the glass part 11 is delayed behind the start of the heat expansion of an electrode 15 on the element, and the electrode 15 is pressed to deform plastically. When the forward voltage of a circuit in figure (b) after the opposite-directional pulse application is measured 5, the sample where the electrode 15 on the element and metallic conductors 14 are in incomplete contact varies in voltage because of said deformation. Consequently, the element in the incomplete contact state is stored as a defective. |
