| 摘要 |
PURPOSE:To enable to suppress sharply ohmic inferiority of a silicide by a method wherein an impurity, especially antimony considered as the N type dopant is added to the silicide. CONSTITUTION:A molybdenum silicide (identified as MoSi2 from diffraction of X-rays) is used as a sputter target. Namely the silicide obtained by sputter deposition is used as the wiring material and the gate material other than a silicide formed by annealing. Accordingly to add antimony to the silicide thereof, antimony is added by 10<15>cm<-3> or more, namely by about 0.1ppna or more to form the target when the molybdenum silicide target is to be manufactured. The method to form the molybdenum silicide added with antimony may be performed by the sputtering method or the electron beam evaporation method. |
