发明名称 Integrated circuit having non-volatile programmable semiconductor memories
摘要 A circuit arrangement is provided to supervise the supply voltage of the programming logic of a non-volatile integrated circuit comprising insulated-gate field-effect transistors whose threshold voltages are altered by the programming logic and whose gate electrodes are connected wordwise to word lines. The circuit arrangement is integrated into the integrated circuit and includes an integrated threshold switch connected to the programming voltage source and a reference voltage source having at least one, but preferably two zener diodes connected in series. The threshold switch in combination with supervision logic connects the word lines to the substrate voltage of the programming logic when the supply voltage is lost. An additional threshold switch coupled to the supervision logic, the reference voltage source and the programming voltage line connects the word lines to the substrate voltage of the programming logic when the programming voltage is lost.
申请公布号 US4428071(A) 申请公布日期 1984.01.24
申请号 US19810321829 申请日期 1981.11.16
申请人 ITT INDUSTRIES INC. 发明人 WILMSMEYER, KLAUS
分类号 G11C17/00;G06F11/00;G11C5/14;G11C16/06;G11C16/22;G11C17/18;H01L21/8229;H01L27/102;H01L29/74;(IPC1-7):G11C7/00 主分类号 G11C17/00
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