| 发明名称 |
Semiconductor read only memory |
| 摘要 |
A semiconductor fused programmable read only memory having a fuse resistor formed on an insulator film of the surface of a substrate. An island region having a conductivity opposite to that of the surrounding region is formed below the fuse resistor for avoiding excess current flow through the substrate.
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| 申请公布号 |
US4428066(A) |
申请公布日期 |
1984.01.24 |
| 申请号 |
US19810256666 |
申请日期 |
1981.04.22 |
| 申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
KIHARA, KAZUO;IKEDA, MASASHI |
| 分类号 |
G11C17/06;G11C17/14;H01L21/3205;H01L21/8229;H01L23/52;H01L23/525;H01L27/102;(IPC1-7):G11C11/36 |
主分类号 |
G11C17/06 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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