| 摘要 |
Apparatus for sensing deposition of a thin film layer of a material from a source onto a substrate having a carriage assembly including a predetermined number of apertures for selectively passing predetermined portions of a material from the source along each of a plurality of predetermined paths located in the proximity of the substrate under conditions correlated to that under which the material is deposited through a deposition path onto the substrate, inhibiting elements positioned relative to the carriage assembly for selectively inhibiting passage of predetermined portions of the material through a selected number of the predetermined number of the apertures, and a monitor for monitoring a selected parameter of the thin film material which is passed through other than the selected number of apertures of the carriage assembly wherein the monitor includes a plurality of detectors one of each of which is positioned along one of the plurality of predetermined paths and being adapted to sense a predetermined portion of a thin film material being passed along its associated predetermined path and for producing electrical signals derived from the selected parameter representating at least one of the mass per unit area, thickness and deposition rate of the thin film material is shown. A method for measuring at least one of the mass per unit area, thickness and deposition rate of a thin film layer being deposited through a deposition mask selected from a plurality of deposition masks adapted to be positioned between a substrate and a source is also shown.
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