发明名称 EXPOSING METHOD
摘要 PURPOSE:To prevent deterioration of resolution due to N2 production of a photoresist film, by forming a photoresist film coating a substrate, placing a photomask having a prescribed pattern on said film, and scanning the photomask with a light source having a small opening diameter to expose the film. CONSTITUTION:A glass substrate 2 for forming a working photomask having a Cr metallic film and a photoresist film laminated is allowed to face a master photomask 1 prepd. by forming a Cr metallic pattern on the glass substrate, and both are brought into intimate contact by using a jig 3 and evacuating the space between the substrates 1, 2. UV rays are allowed to scan the mask 1 through a slit 11 formed through a light shading plate 11 moved vertically and laterally in a prescribed pitch and speed, or the jig 3 may be moved while the plate 12 is fixed. Alternatively, the mask 1 may be scanned using a fiberscope 21 in place of the plate 12. As a result, this method prevents conventional troubles that the substrate 2 is uniformly irradiated in one time to rise in temp. decomposing the photoresist, producing N2, and deteriorating adhesion between the metallic film and the resist, and resolution of the pattern.
申请公布号 JPS5912441(A) 申请公布日期 1984.01.23
申请号 JP19820121534 申请日期 1982.07.12
申请人 FUJITSU KK 发明人 NAGASHIMA SETSUO
分类号 G03F7/20;H01L21/027 主分类号 G03F7/20
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