| 摘要 |
PURPOSE:To form sputtered thin films having excellent quality on both surfaces of a film-like substrate in the stage of forming the sputtered thin films on both surfaces of said films, by installing sputtering devices dividedly to two upper and lower stages and providing the sputtering devices always below the substrate. CONSTITUTION:A film-like substrate P in a takeup reel 17 is fed in a reverse direction through work rolls 13-16 and is taken up on a feed reel 12 is a vacuum vessel, and the surface of the substrate P is subjected to a pretreatment for removing impure gas stuck on said surface with the heated work rolls during said time. While the substrate P is taken up on the reel 17 with the cooled work rolls from the reel 12 under supply of an inert gas such as Ar, sputtered thin films are formed on the one surface of the substrate with sputtering sources 21- 24, and on the other one surface with sputtering sources 25-28. The sources 21- 28 are installed always below the substrate P, and the sputtered thin films having excellent quality are obtained without sticking of the impurities released from the sputtering sources on the surfaces of the substrate P. |
