| 摘要 |
<p>PURPOSE:To stabilize the fusing currents of a polysilicon fusing type P-ROM element by a method wherein polysilicon is grown, impurity is diffused, one conduction type conductivity is given, patterning is executed, oxygen ions are implanted to a fusing section, an insulating film is coated, and an electrode wiring is extracted. CONSTITUTION:Phosphorus is diffused to polysilicon grown on an oxide film 21 grown on a silicon substrate 20, an opening 24 is formed at a section as the blowout section of polysilicon 22, in which polysilicon is patterned, by a photo- resist 23, and 1X10<16>cm<-2> oxygen ions are implanted. When ions are implanted and the photo-resist 23 is removed, a polysilicon layer 22A to which ions are implanted is formed. The inter-layer insulating films 26 are grown, contact openings 27 are bored, and Al electrodes 28 are extracted. The obtained fusing currents of the polysilicon fusing type P-ROM element display excellent characteristics because oxygen ions accelerate the fusing of polysilicon.</p> |
