| 摘要 |
PURPOSE:To enable to use a narrow width insulating film to be used for separation of a wiring film by a method wherein a first connecting hole, having hole diameter increased as it approaches to the upper part, and a second connecting hole which is made narrower as it approaches to the upper part of it are formed using the prescribed pattern, and the upper wiring film is separated by cutting at the stepping of the second connecting hole. CONSTITUTION:A connecting hole, located at the point where Al wiring film 19A and 19B of the second layer to be formed on a PSG film 18 and the Al wiring film 16 of the first layer located below said PSG film 18 are to be connected, is provided and the wiring hole to be formed at the point where the Al wiring film of the second layer is to be divided into 19A and 19B, is formed by performing a plasma etching using the photoresist film as a mask in such a manner that the diameter of the hole is narrowed as it approaches the upper part. When an Al film is formed on the Si substrates 11 and 22 having a connecting hole 23, a disconnection of wire is generated on the Al wiring film 24A and 24B which were formed on the stepping of the aperture part, thereby enabling to obtain the desired wiring pattern by having an automatic disconnection between the wirings 24A and 24B. |
