| 摘要 |
PURPOSE:To extremely simplify positioning, thereby to improve working properties and productivity, by selectively and locally heating a predetermined area on a semiconductor wafer by the transfer of heat through the area of contact between the wafer and PSG. CONSTITUTION:A wafer 3 is disposed on pins 4a upstanding on a wafer table 4. A phosphate glass (PSG) is deposited only on a predetermined area of the surface of the wafer 3 by evaporation using mask, the deposited film having a thickness of about 1.2mum. A carbon dioxide gas laser 1 can emit light with a center wavelength of 10.6mum and the vicinity which is generated through the transition from a molecular state SIGMAu<+>(00 deg.1) to a molecular state SIGMAg<+>(10 deg.), or light with a center wavelength of 9.6mum and the vicinity which is generated through the transition from a molecular state SIGMAu<+>(00 deg.1) to a molecular state SIGMAg<+>(02 deg.0). If the carbon dioxide gas laser 1 is oscillated with 10<4>W for about one second and the irradiation intensity of the light with a center wavelength 10.6mum and the vicinity on the silicon wafer is set at about 80W/cm<2>, then only the predetermined part of the wafer covered with the PSG film can be raised in temperature to about 900 deg.C for several seconds. |
