| 摘要 |
PURPOSE:To obtain a resin-sealed semiconductor device having high reliability by balancing upper and lower bondabilities of inner article enclosed with sealing resin to prevent moisture resistance from being deteriorated due to an abrupt thermal stress of solder dipping or the like. CONSTITUTION:A passivation film similar to the front surface of a semiconductor element 1 such as a silicon nitride film 5 is formed on the back surface of an element placing unit 2 of a lead frame, and an inner plating layer 4 similar to the front side is formed on the back surface of a bonding portion at the inner end of the lead 3 of the lead frame. Thus, the front surface states of the bonding portion of the lead of the frame and of the upper and lower sides of the unit 2 which has a semiconductor element of a lead frame become substantially the same, the bondabilities are balanced, a boundary separation hardly occurs even if an abrupt thermal stress is applied to prevent the moisture resistance from being deteriorated. |
