| 摘要 |
PURPOSE:To increase the deposition rate of a deposited film by activating a raw material gas by microwaves while activating the raw material gas by utilizing a heat-generation phenomenon by microwaves of a substance having large dielectric loss. CONSTITUTION:Raw material gases A, B are each introduced to a quartz inner cylinder 1 and an outer cylinder 2, and activated respectively to a precursor and active species for shaping a deposit film in an activating space 3. A film formation space 4 is formed on the discharge opening sides of the quartz inner cylinder 1 and the outer cylinder 2, and a substrate 5, a deposit surface thereof is directed toward the discharge opening, is fixed to a substrate holder 6 in the film formation space 4. The activating space 3 has a waveguide 7 and the terminal section 8 of the waveguide 7, and is surrounded by a cylindrical water-cooling applicator 9 also filling the role of a waveguide, and microwaves 11 are introduced through the waveguide 7 from a microwave oscillator 10. A dielectric 12 having large dielectric loss is fitted to a section crossing with the waveguide 7 for the quartz inner cylinder 1, the dielectric 12 generates heat by microwaves 11, and the activation of the raw material gases is promoted. |
