| 摘要 |
PURPOSE:To obtain a high quality N type crystal layer, without the effects of delicate change in heat treating conditions and a minute amount of impurities, by thermally diffusing In in Hg1-xCdxTe (0<=x<=1) and providing an N layer. CONSTITUTION:Hg and Cd, whose vapor pressure is high, are evaporated during the crystal growing from Hg1-xCdxTe and defects are liable to occur. The thin film crystal of the Hg1-xCdxTe incurs serious damage owing to said defects. Vacant holes, from which Hg and Cd are evacuated, become acceptors, and a P type semiconductor is obtained in general. Heat treatment of said P type crystal is performed under the vapor pressure of the Hg and Cd, and the P type crystal can be changed into an P or N type crystal, whose carrier concentration is further lower. Even in this case, however, the crystal is liable to receive the effects of heat treating conditions and impurities, and a high quality film is head to obtain. When In is thermally diffused on the entire or partial surface of an N or P type Hg1-xCdxTe layer, which has high resistivity and low mobility, a high quality N type crystal, which has low resistivity and high mobility, can be readily obtained, and various functional elements can be constituted. |
