| 摘要 |
PURPOSE:To prevent the leakage of a signal, by inserting resistors, whose value is smaller than that between the gates of two adjacent FETs, between the gate and the source or the gate and the drain of each FET. CONSTITUTION:Gate bias resistors RB, which have resistance of about 100OMEGA- 1MOMEGA that are sufficiently smaller than the part between gates 8 and 9, are inserted between the gates and the sources of FETs 6 and 7 or between the gates and the drains. In this constitution, the gates 8 and 9 of the FETs 6 and 7 can be separated, the leakage of the signal between the gates is decreased, distortion property is improved, degradation in carrier suppression ratio can be prevented, and the characteristics of the device can be stabilized. |
