| 摘要 |
PURPOSE:To unnecessitate a passivation film and form a photosensor array device having a line sensor wherein the short circuit of diode section is prevented by a method wherein a photo diode and a blocking diode are constructed in an integral body. CONSTITUTION:An amorphous Si film 10 of P-I-N type is adhesion-formed in island form between opposed ends between a common electrode 2a and a discrete electrode 2c formed on a photo transmitting glass substrate 1, and further the upper electrode 7 composed of an Al deposited film is adhesion-formed at the center except for the peripheral part of this Si film 10. A clear electrode 6 composed of a clear conductive film for photo incidence purpose is adhesion- formed on the Si film 10 and the upper electrode 7 formed on the opposed end to the common electrode 2a, and accordingly the photo diode 11 which performs photoelectric conversion by detecting light is formed between this clear electrode 6, upper electrode 7 and the common electrode 2a. Besides, the blocking diode 12 for preventing cross talk generated by the turn-in of the photoelectric conversion signal from a matrix wiring 8 is formed between the discrete electrode 2c and the upper electrode 7 of the Si film 10. |
