| 摘要 |
PURPOSE:To increase the response speed which depends on the floating capacity of a multi-layer wiring, by making the drain of a transistor TR have an output signal wiring which is common to all bits and therefore reducing the output impedance of a line sensor. CONSTITUTION:For a crosstalk preventing thin film transistor TR6, the source, drain and gate electrodes are connected to the output terminal of a photoelectric transducer 2, an output signal terminal 7 which is common to all bits and each multi-layer wiring 4 respectively. This TR6 consists of an amorphous silicon TR. A gate selector 8 consists of a pulse generator which selects successively the gate electrodes of the TR6. The optical signal read out by each transducer 2 is converted into an electric signal. Then the TR6 connected to each transducer 2 is selected by each gate electrode selecting signal delivered from the selector 8. Thus the electric signal can be read through the terminal 7. |
