| 摘要 |
PURPOSE:To inhibit the disconnection of a metallic film for wiring by forming an inclination expanding upward to a crossed section between the surface of an insulating film formed onto a semiconductor substrate and the inner wall surface of an opening section for passing the metallic film when the opening section is formed to the film. CONSTITUTION:The semiconductor substrate 1 is coated with the SiO2 film 2, a resist film 3 to which a predetermined pattern window 3a is bored is formed onto the film 2, and the film 2 is etched in an isotropic manner by using a hydrogen fluoride solution containing a buffer solution while employing the film 3 as a mask to remove the thickness direction of the film 2. Consequently, a diameter of the bottom of a concave section 21 formed to the surface section of the film 2 is made the same as that of the window 3a, a side wall surfce is side-etched, and an inclined plane expanding upward is formed. The film 3 is reused and a residual section remaining in the thickness direction of the film 2 is removed through anisotropic plasma etching using C3F8 gas, and the opening section 22 is formed to the bottom of the concave section 21. Accordingly, the opening section, an upper circumferential side thereof is inclined, is obtained in the film 2, while the film 3 is removed, and the whole surface containing the opening section is coated with the metallic film 4. |
