| 摘要 |
PURPOSE:To keep clean an IC and form a high purity metal silicide by heating a substrate having a single crystal silicon or polycrystalline silicon surface at a high temperature, depositing a metal thereon through the sputtering and forming a metal silicide film. CONSTITUTION:Silicon wafers 3 are placed on a sample stage with in a vacuum reservoir 1 and an Mo plate 5 is fitted as the target to the surface of opposing electrode 4. After the inside is exhausted to a vacuum condition through the exhausting port 6 and the silicon wafers 3 are heated with a heater 7 consisting of tantalum lead, the argon gas (Ar) is introduced from the gas introducing port 8, pressure is reduced and a DC voltage is applied with the opposing electrode 4 considered as the cathode. Thereby, the Ar ions collide with the Mo plate 4 and the activated Mo atoms are emitted therefrom and are deposited on the surface of silicon wafer 3 on the opposing sample stage 2. Since the surface of silicon wafer 3 is heated, the activated silicon atoms and Mo atoms react each other and a molybdenum silicide (MoSi2) can be formed. |
