| 摘要 |
The alloy contains in proportions by weight: gold 73 to 99.6%, germanium 0.3 to 26.8% (preferably 3.4%) and silicon 0.1 to 12.5% (preferably 1.9%). It is particularly suitable for bonding an integrated circuit substrate (e.g. of sapphire) to a ceramic supporting "package". Strong bonds (many times stronger than prior art bonds employing binary Au-Ge and Au-Si alloys) may be obtained at brazing temperatures below 400 DEG C. Preferably gold, silicon or germanium is initially deposited on the ceramic surface. |
