| 摘要 |
PURPOSE:To prevent the deformation and cracking of a supporting substrate, and to facilitate the control of temperature gradient in a microzone melting process, by heating a part of a thin film semiconductor material from both sides of the substrate supporting the semiconductor, thereby melting the part of the material. CONSTITUTION:The thin film semiconductor material 2 formed on a supporting substrate 1 is heated from both sides by the additive effect of the first heating wire 4a placed at a distance of La from the surface and the second heating wire 4b placed opposite to the wire 4a and at a distance of Lb from the reverse surface of the substrate 1. The molten part 3 is formed in the thin film semiconductor material by this process. The first and the second heating wires 4a, 4b are shifted relative to the supporting substrate to move the molten part of the thin film semiconductor material 2, thereby purifying the thin film semiconductor material 2, and converting the material to a single crystal. |
