| 摘要 |
PURPOSE:To prevent the leakage current generating between a gate electrode and a source and drain electrode by a method wherein an amorphous film is coated on the part opposing to the gate electrode, and an Si3N4 film is formed around said amorphous silicon film. CONSTITUTION:The gate electrode G and a capacitor electrde 7 are formed on a transparent substrate 5, and an SiO2 film 8 is depositedly formed in such a manner that it is covering the entire surface of the substrate 5. The first si3N4 film 9 is formed, and an amorphous silicon film AS is formed at the position opposing to the gate electrode G. Then, the second Si3N4 film 10 is coated on th first Si3N4 film 9 located around said amorphous silicon film 9. Source and drain electrodes S and D are then formed and, at the same time, the lead terminal 11 of a capacitor electrode 7 is formed. |
