| 发明名称 |
Method for producing improved silicon carbide resistance elements |
| 摘要 |
Silicon carbide shapes of the general type shown and described in U.S. Pat. No. 4,125,756 are densified and nitrided in such a way as to produce shapes with improved durability and reduction in temperature span in response to voltage changes.
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| 申请公布号 |
US4426405(A) |
申请公布日期 |
1984.01.17 |
| 申请号 |
US19810236377 |
申请日期 |
1981.02.20 |
| 申请人 |
EMERSON ELECTRIC CO. |
发明人 |
HIERHOLZER, JR., FRANK J.;SHELTON, GERALD L. |
| 分类号 |
C04B35/571;C04B41/52;C04B41/89;(IPC1-7):C23C13/04;C23C11/00 |
主分类号 |
C04B35/571 |
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