| 摘要 |
PURPOSE:To imporve the yield rate for vacuum tightness of the titled semiconductor pressure sensor by a method wherein an adhesive surface only is formed into roughened face, other parts are formed into mirror face, and Ni is adhered to the roughened face alone, thereby enabling to prevent the creeping up of solder used. CONSTITUTION:The diaphragm face 12 of a wafer 17 and the through hole 16 and the like of a wafer 18 are all finished in a mirror finished face. Contacting surfaces 15', 15'' and 15''' have a roughened face, not a mirror-finished face. Their surfaces are activated by dipping them into a tin chloride solution. Then, their surfaces are wetted by dipping them into a paradium chloride solution. An Ni layer 42 is formed into an adhesive state by dipping into a Bell-nickel solution. At this time, said Ni is not adhered at all to a diaphragm 12, a side wall 12' and a through hole 16. |
