发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To make the uniform selective access possible, by indicating the address, where a defective storage element exists, as Ai and setting an optional Ai address signal electrode to the second value when this signal electrode has the first value Vcc and setting it to the first value when it has the second value. CONSTITUTION:Addresses of defective elements are defined as A=A0, A1-An. When an Ai address signal electrode 2 has the second value, the Ai address signal electrode 2 and a power source electrode 3 are short-circuited by a wire bond 5. When the Ai address signal electrode 2 has the first value, this electrode 2 and an earth electrode 4 are short-circuited by the wire bond 5. Thus, storage elements are accessed by the uniform selecting system.
申请公布号 JPS598199(A) 申请公布日期 1984.01.17
申请号 JP19820115936 申请日期 1982.07.02
申请人 MITSUBISHI DENKI KK 发明人 OGAWA TOSHIYUKI;HIDA YOUICHI
分类号 G11C29/00;G11C29/04 主分类号 G11C29/00
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