发明名称 CRYSTAL GROWTH APPARATUS
摘要 PURPOSE:To enable the operation of the recharging process suitable for the preparation of a high-quality crystal, by using a rotary crucible for pulling of crystal and having a hole for receiving molten liquid, a crucible for retaining molten liquid, and a crucible for replenishing the raw material and connected with both crucibles. CONSTITUTION:A seed crystal 22 is dipped in the molten silicon 21 heated at about 1,400 deg.C and contained in the rotary crucible 11, and the seed crystal and the rotary crucible are rotated slowly to reverse directions at a rate of several turns per minute. The seed crystal 22 is pulled upward keeping the above conditions to effect the growth of the silicon single crystal 23. On the other hand, polycrystalline silicon 24 is molten in the raw material replenishing crucible 13, and the molten liquid is fed through the connecting tube 14 and the hole 15 to the rotary crucible 11 to keep the constant liquid level. The liquid level can be maintained easily at a definite level by attaching a liquid level sensor to the liquid surface, and performing the melting of the polycrystalline silicon 24 using the signal from the sensor as a guide.
申请公布号 JPS598695(A) 申请公布日期 1984.01.17
申请号 JP19820118024 申请日期 1982.07.06
申请人 FUJITSU KK 发明人 HONDA KOUICHIROU;OOSAWA AKIRA;TAKIZAWA RITSUO
分类号 C30B15/12;C30B15/02 主分类号 C30B15/12
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