发明名称 PHOTOMASK FOR FABRICATION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent heat strain of a photomask due to heat caused by transmission of intense exposure light, by superposing a material same as the photomask on a pattern face, and forming the image of dust on the mask at a position different from that of the pattern. CONSTITUTION:A plane pattern 32 is placed on a quartz glass 31, and a quartz glass 33 same in material as the glass 31 is further placed on the glass 31, and the glass 33 is joined with a low-melting junction glass 34 at the circumference to constitute a photomask. Therefore, even if dust 35 is attached to the surface of the glass 33, the image of the dust 35 is not attached to the resist by baking because the positions of formation of the images of the dust 35 and the pattern 32 are different from each other. Moreover, since the pattern face is interposed between the materials same in expansion coefft., heat strain is small even if intense exposure light is transmitted. The pattern 42 formed on the quartz glass 41 may be buried perfectly in the quartz glass by forming the quartz glass 43 and joining it with the glass 41 into one body.
申请公布号 JPS597952(A) 申请公布日期 1984.01.17
申请号 JP19820117531 申请日期 1982.07.06
申请人 NIPPON DENKI KK 发明人 KAMOSHITA MOTOTAKA
分类号 G03F1/00;G03F1/48;H01L21/027 主分类号 G03F1/00
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