FABRICATION OF MICROMINIATURE DEVICES USING PLASMA ETCHING OF SILICON AND RESULTANT PRODUCTS

摘要

FLAMM-1 FABRICATION OF MICROMIMINATURE DEVICES USING PLASMA ETCHING OF SILICON AND RESULTANT PRODUCTS This invention relates to fabrication of microminiature devices, such as integrated circuit utilizing the delination of fine-line patterns in such devices by dry etching processes. By utilizing a fluorine-containing gaseous compound in a plasma etching process, isotropic etching of doped or undoped monocrystalline silicon and polycrystalline silicon is achieved. The etching processes are substantially free of any proximity effects and are characterized by a high etching rate at relatively low power levels, high selectivity (with respect to, for example, silicon dioxide) and excellent uniformity. By mixing other gases (for example, chlorine) with the fluorine-containing gas, the amount of undercutting achieved during the etching process can be selectively controlled.