发明名称 ELECTRON-BEAM EXPOSURE METHOD
摘要 PURPOSE:To reduce an effect of a space change effect, and to draw a pattern with high accuracy by flowing ion currents in a beam path in an electron-beam exposure device. CONSTITUTION:Ion current control electrodes 18 are set up between an electromagnetic lens 8 for shrinking beams and an electromagnetic lens 9 for projection. A drawing electrode 17 is fitted at the outlet end of an ion plasma generator 16. The same voltage is applied to the electrodes 17, 18 to flow ion currents out in the direction of an electron gun. Consequently, ion currents flow in the opposite direction to the flow of electron beams, and the both mix with each other. As a result, positive changes are obtained, Ar<+> ions are interposed among electrons, separate electrons are brought to the state in which they are sealed, Coulomb repulsion is extremely small, and the space charge effect is reduced remarkably. Accordingly, the dimming of electron beams can be removed.
申请公布号 JPS598335(A) 申请公布日期 1984.01.17
申请号 JP19820118025 申请日期 1982.07.06
申请人 FUJITSU KK 发明人 OSADA TOSHIHIKO
分类号 H01L21/027;H01J37/02;(IPC1-7):01L21/30 主分类号 H01L21/027
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