发明名称 Method and apparatus for processing negative photoresist
摘要 A negative photoresist emulsion, wherein after a film of negative photoresist emulsion on a substrate has been exposed for pattern writing in vacuum to charged particle beams or soft X-ray beams, the film-coated substrate is transferred to, and kept in, a chamber filled with non-oxidizing gas, and then the substrate is removed to the outside atmosphere. By this method, a curing effect of the photoresist film is prevented, enabling formation of fine patterns with precision. An apparatus for carrying out the above method, has a gas chamber filled with non-oxidizing gas connected to an exposure chamber, and the substrate, after such exposure, is kept in an atmosphere of non-oxidizing gas in the gas chamber before being removed to the outside atmosphere. In either the above-method or apparatus, the concentration of oxygen in the non-oxidizing gas must be less than 5%, preferably less than 1%.
申请公布号 US4426439(A) 申请公布日期 1984.01.17
申请号 US19810329941 申请日期 1981.12.11
申请人 FUJITSU LIMITED 发明人 KOBAYASHI, KOICHI;KAWASHIMA, KENICHI;OSHIO, SHUZO
分类号 H01L21/302;G03F7/038;G03F7/20;G03F7/26;G03F7/38;H01L21/3065;(IPC1-7):G03C5/04 主分类号 H01L21/302
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