Process for producing thin-film transistors on an insulating substrate

摘要

Process for the production of thin-film transistors on an insulating substrate, wherein it comprises the following stages: 1. deposition on an insulating substrate of a coating of a metal able to form a silicide in contact with a silicon, 2. photoengraving of the first metal coating to define the sources, drains and channels for the future transistors and various connections between the transistors, 3. deposition of a silicon coating by reactive gaseous phase plasma, which leads to the appearance of a silicide coating in contact with the metal of the photoengraved coating, 4. deposition of a silica coating by reactive gaseous phase plasma, 5. deposition of a conductive coating by reactive gaseous phase plasma, 6. photoengraving of the conductive coating-silica coating-silicon coating system, without etching the silicide covering the photoengraved metal coating. Application to the production of large-area electronic components used e.g. in the production of flat display screens and the like.