| 摘要 |
PURPOSE:To easily prepare an integrated and miniaturized thin film element, by lowering the electric resistance of an amorphous thin film by injecting an ion into said thin film to carry out electrical connection through the thin film. CONSTITUTION:Plural electrode layers 2, an amorphous silicon layer 3 and an insulation layer 4 are successively formed on a light previous substrate 1 and the insulation layer 4 is removed at a position where at least superimposed to each electrode layer 2 to form plural opening parts 5. In the next step, a metal ion is injected into a region 6 and diffused by heat treatment to electrically connect plural metal ion diffused prts 7 and plural electrode layers 2. In addition, plural electrode layers 8 electrically connected to the metal ion diffused parts 7 on the amorphous silicon layer 3 to connect the amorphous silicon layer 3 separated by the metal ion diffused parts 7 in series. By this method, the integration of the thin film is facilitated. |
