| 摘要 |
PURPOSE:To reduce power consumption as an EPROM device, by preventing flow of current in common terminal at the time of reading. CONSTITUTION:When writing control signal -WE is high level with high voltage Vpp for writing impressed to a terminal Vpp/-OE, MOSFETQ6, Q7 become on, and output level of a voltage generating circuit 2 becomes low and MOSFETQ3 becomes off. When the signal -WE is made low level under this condition, MOSFETQ6, Q7 become off. Accordingly, high level signal of Vpp is transmitted to the voltage generating cirucit 2 through a condenser C, and the generating circuit 2 generates high voltage Vpp+alpha. MOSFETQ3 becomes on and writing pulse phiw is outputted. Consequently, DC current does not flow when reading, and power consumption can be reduced as an EPROM device. |
