| 摘要 |
PURPOSE:To remove the stepped difference in a surface, and to improve inter- layer adhesiveness remarkably by using polyimide containing a proper quantity of a silane coupling agent as an inter-layer resin layer. CONSTITUTION:A silicon dioxide film 12 is formed to the surface of a semiconductor substrate 1. The resin film 14 is formed while coating a first wiring conductor layer 13 with a predetermined wiring pattern. A desired window hole 14' for conduction is formed to the resin film 14, a second wiring conductor layer 15 is laminated on the window hole, and other wiring conductor layers are formed as required. A material in which the silane coupling agent of 0.1- 15wt% to a polyimide resin is mixed is used as the resin film 14. A material having high heat resistance is selected and used in consideration of the manufacturing processes, etc. of the multilayer wiring structure as the silane coupling agent. |
