| 摘要 |
PURPOSE:To obtain the semiconductor device of structure with a clearance between a gate electrode and source-drain regions by forming a blocking layer, etching the layer and selectively implanting ions by utilizing the residual section of the blocking layer remaining around a stepped difference section as a mask for convenience sake. CONSTITUTION:The blocking film 7 in polycrystalline silicon, etc. as a mask for selectively implanting an impurity is formed. The silicon film 7 is etched by using an RIE method, and width W equal to approximately thickness of the polycrystalline silicon film 7 is left in the residual section 7' not etched. Arsenic ions are implanted as a dopant. An impurity region with the clearance G, the source-drain regions, is obtained between the gate and the source-drain regions by the functioning of the mask by the residual section 7'. |
