| 摘要 |
PURPOSE:To manufacture the semiconductor device containing a passive element, such as a capacitor, which requires no exclusive area on the surface of a chip, resistor, etc. by providing a compound semiconductor layer disposed onto one main surface of a substrate, an electrode drawn out to the other main surface and an electrode disposed onto the compound semiconductor layer. CONSTITUTION:A layer 2 consisting of semi-insulating aluminum gallium arsenic (Al0.3Ga0.7As) is formed onto the semi-insulating gallium arsenide (GaAs) substrate 1 in approximately 400mum thickness. An opening 3 reaching the lower surface of the aluminum gallium arsenic layer 2 is formed from the lower (back) surface of the semi-insulating gallium arsenide substrate 1. The back electrode 4 combining a heat sink, which extends up to the opening 3 and consists of gold germanium (AuGe), is formed to the lower surface of the semi-insulating gallium arsenide substrate 1, upper electrode-wiring 5 composed of aluminum, gold, gold germanium, gold gemanium nickel (AuGeNi), or the like is formed to the upper surface of the semi-insulating aluminum gallium arsenic layer 2, and the capacitor with the stereo-structure of the semiconductor device is completed. |
