| 摘要 |
PURPOSE:To permit to obtain a thin film with any desired Ga atom ratio by a method wherein antimony and indium are vapordeposited on a heated substrate to have a specific range of composition ratio in the deposited film, and gallium alone or gallium and antimony are vapor-deposited thereon simultaneously. CONSTITUTION:A thin film is formed on a heated substrate to render the composition ratio of antimony to indium (FSb/FIn) in a range of 0.65 to 0.95, and Ga or the like is vapor-deposited thereon (In1-yGaySb). An atomic ratio (y) of Ga composition in the thin film is represented by y=AGa/SIGMAASb, and the forming of an InSb thin film containing a proper amount of exessive In is essential for obtaining a single phase film. The amount of (y) is uniquely determined by the vapor-depositing condition. The vacuum degree is preferably not less than 10<-3> Torr which level is generally used. The film can be formed to have any desired thickness within a range where its characteristic is held and, in usual, a range from several 100Angstrom to 10mum is advantageous for the industrial purpose, and a film thickness forming speed of about 1-100Angstrom /sec is preferable for the desired purpose. |
