| 摘要 |
PURPOSE:To contrive improvement of the characteristics of the element by reducing a margin of mask aligning in manufacture of semiconductor devices using washed emitter technique by forming an emitter and a base contact hole by use of one mask. CONSTITUTION:After forming a base diffusion layer 4 on the surface of a semiconductor substrate 1, a first window 6a and a second window 6b are opened by using one mask 11. Next, impurities are introduced from the window 6a while masking the window 6b and an emitter region 7 is formed. Subsequently, an emitter electrode E and a base electrode are formed on the windows 6a and 6b. Thus, the contact hole for forming an electrode is formed by use of one mask so that a distance between the base and the emitter can be reduced compared with in the conventional two-mask method. Accordingly, characteristics of the element, more particularly the high-speed properties can be improved. |
