Method for manufacturing semiconductor device.

摘要

A semiconductor device is manufactured by selectively removing an insulating film (28) which covers at least one conductive layer (24, 26, 27) to form at least one contact hole (29) partially exposing the conductive layer (24, 26, 27). Then, a layer of an inorganic conductive material having a melting point lower than the material comprising the conductive layer (24, 26, 27) is formed on a surface of the insulating film (28) and is melted to fill the contact hole (29) with the inorganic conductive material. Finally a wiring layer (32) is formed in contact with the inorganic conductive material filled in the contact hole (29).