发明名称 |
Structure comprising a monocrystalline substrate supporting a device layer of semiconductor material. |
摘要 |
<p>An intermediate, lattice accommodating epitaxial layer (4) of GaAlAs is positioned between a monocrystalline substrate (2), eg of Al2O3, and a device layer (6) of semiconductor material (eg of GaAs) in which semiconductor devices can be formed. A thin layer (5) of Ge may be included between the substrate (2) and the GaAlAs layer (4) to permit a wider lattice spacing tolerance for the substrate (2).</p> |
申请公布号 |
EP0097772(A2) |
申请公布日期 |
1984.01.11 |
申请号 |
EP19830103163 |
申请日期 |
1983.03.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HOVEL, HAROLD JOHN;ROSENBERG, ROBERT |
分类号 |
H01L29/812;H01L21/20;H01L21/205;H01L21/338;H01L21/8222;H01L27/06;H01L27/12;H01L31/108;H01L31/18;H01L33/00;(IPC1-7):01L29/06;01L21/20 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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