发明名称 |
Thin film transistor |
摘要 |
A thin film transistor comprising a substrate having source and drain electrodes formed thereon, a semiconductor layer making contact in part with the source electrode and in part with the drain electrode, a gate electrode, and a gate insulating layer positioned between the semiconductor layer and the gate electrode is disclosed. A portion of the drain electrode is held in overlapping relation to a portion of the gate electrode while a portion of the source electrode is spaced apart from said gate electrode.
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申请公布号 |
US4425572(A) |
申请公布日期 |
1984.01.10 |
申请号 |
US19810261545 |
申请日期 |
1981.05.07 |
申请人 |
SHARP KABUSHIKI KAISHA;JAPAN ELECTRONIC INDUSTRY DEVELOPMENT ASSOCIATION |
发明人 |
TAKAFUJI, YUTAKA;NONOMURA, KEISAKU;TAKECHI, SADATOSHI;WADA, TOMIO |
分类号 |
H01L29/40;H01L29/417;H01L29/78;H01L29/786;(IPC1-7):H01L45/00;H01L23/48 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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