发明名称 Thin film transistor
摘要 A thin film transistor comprising a substrate having source and drain electrodes formed thereon, a semiconductor layer making contact in part with the source electrode and in part with the drain electrode, a gate electrode, and a gate insulating layer positioned between the semiconductor layer and the gate electrode is disclosed. A portion of the drain electrode is held in overlapping relation to a portion of the gate electrode while a portion of the source electrode is spaced apart from said gate electrode.
申请公布号 US4425572(A) 申请公布日期 1984.01.10
申请号 US19810261545 申请日期 1981.05.07
申请人 SHARP KABUSHIKI KAISHA;JAPAN ELECTRONIC INDUSTRY DEVELOPMENT ASSOCIATION 发明人 TAKAFUJI, YUTAKA;NONOMURA, KEISAKU;TAKECHI, SADATOSHI;WADA, TOMIO
分类号 H01L29/40;H01L29/417;H01L29/78;H01L29/786;(IPC1-7):H01L45/00;H01L23/48 主分类号 H01L29/40
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