| 发明名称 |
Polycrystalline silicon Schottky diode array |
| 摘要 |
A process and structure are disclosed which are suitable for forming large arrays of Schottky diodes at desired locations between mutually perpendicular strips of aluminum and strips of metal-silicide. The invention is particularly useful in creating read-only memories and programmable logic arrays, and allows fabrication of Schottky diodes more compactly than previous structures.
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| 申请公布号 |
US4425379(A) |
申请公布日期 |
1984.01.10 |
| 申请号 |
US19810233348 |
申请日期 |
1981.02.11 |
| 申请人 |
FAIRCHILD CAMERA & INSTRUMENT CORPORATION |
发明人 |
VORA, MADHUKAR B.;HINGARH, HEMRAJ K. |
| 分类号 |
G11C17/06;H01L21/338;H01L21/82;H01L21/84;H01L23/528;H01L27/102;H01L29/04;H01L29/47;H01L29/861;H01L29/872;(IPC1-7):H01L29/48 |
主分类号 |
G11C17/06 |
| 代理机构 |
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